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C2M0080120D

Manufacturer: Cree Wolfspeed
C2M0080120D
Manufacturer : Cree/Wolfspeed
Packaging : Bulk
Series : C2M™
Part Status : Active
FET Type : N-Channel
Technology : SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) : 1200V
Current - Continuous Drain (Id) @ 25°C : 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 20V
Rds On (Max) @ Id, Vgs : 98 mOhm @ 20A, 20V
Vgs(th) (Max) @ Id : 4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs : 62nC @ 5V
Vgs (Max) : +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds : 950pF @ 1000V
FET Feature : -
Power Dissipation (Max) : 192W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247-3
Package / Case : TO-247-3
Availability: 822 in stock
RFQ/Quote
Product AttributeAttribute Value
Manufacturer Cree/Wolfspeed
Packaging Bulk
Series C2M™
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200V
Current - Continuous Drain (Id) @ 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 98 mOhm @ 20A, 20V
Vgs(th) (Max) @ Id 4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 62nC @ 5V
Vgs (Max) +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 1000V
FET Feature -
Power Dissipation (Max) 192W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3