SIZ998DT-T1-GE3
SIZ998DT-T1-GE3
Manufacturer : Vishay Siliconix
Packaging : Cut Tape (CT)
Alternate Packaging
Series : TrenchFET®
Part Status : Active
FET Type : 2 N-Channel (Dual), Schottky
FET Feature : Standard
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 20A (Tc), 60A (Tc)
Rds On (Max) @ Id, Vgs : 6.7 mOhm @ 15A, 10V, 2.8 mOhm @ 19A, 10V
Vgs(th) (Max) @ Id : 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 8.1nC @ 4.5V, 19.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 930pF @ 15V, 2620pF @ 15V
Power - Max : 20.2W, 32.9W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-PowerWDFN
Supplier Device Package : 8-PowerPair®
Availability: 100 in stock
New Original Stock
Competitive Prices
One-stop
Customer Service
