SIZ900DT-T1-GE3
SIZ900DT-T1-GE3
Manufacturer : Vishay Siliconix
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : TrenchFET®
Part Status : Last Time Buy
FET Type : 2 N-Channel (Half Bridge)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 24A, 28A
Rds On (Max) @ Id, Vgs : 7.2 mOhm @ 19.4A, 10V
Vgs(th) (Max) @ Id : 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 1830pF @ 15V
Power - Max : 48W, 100W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-PowerPair™
Supplier Device Package : 6-PowerPair™
Availability: 100 in stock
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