SIZ200DT-T1-GE3
SIZ200DT-T1-GE3
Manufacturer : Vishay Siliconix
Packaging : Cut Tape (CT)
Alternate Packaging
Series : TrenchFET® Gen IV
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs : 5.5 mOhm @ 10A, 10V, 5.8 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 28nC @ 10V, 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 1510pF @ 15V, 1600pF @ 15V
Power - Max : 4.3W (Ta), 33W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-PowerWDFN
Supplier Device Package : 8-PowerPair® (3.3x3.3)
Availability: 100 in stock
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