SIS903DN-T1-GE3
SIS903DN-T1-GE3
Manufacturer : Vishay Siliconix
Packaging : Cut Tape (CT)
Alternate Packaging
Series : TrenchFET® Gen III
Part Status : Active
FET Type : 2 P-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 6A (Tc)
Rds On (Max) @ Id, Vgs : 20.1 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 42nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 2565pF @ 10V
Power - Max : 2.6W (Ta), 23W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : PowerPAK® 1212-8 Dual
Supplier Device Package : PowerPAK® 1212-8 Dual
Availability: 100 in stock
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