SIA907EDJT-T1-GE3
SIA907EDJT-T1-GE3
Manufacturer : Vishay Siliconix
Packaging : Cut Tape (CT)
Alternate Packaging
Series : TrenchFET®
Part Status : Active
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 4.5A (Tc)
Rds On (Max) @ Id, Vgs : 57 mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id : 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : -
Power - Max : 7.8W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : PowerPAK® SC-70-6 Dual
Supplier Device Package : -
Availability: 1000 in stock
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