SI6562CDQ-T1-GE3
SI6562CDQ-T1-GE3
Manufacturer : Vishay Siliconix
Packaging : Cut Tape (CT)
Alternate Packaging
Series : TrenchFET®
Part Status : Active
FET Type : N and P-Channel
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 6.7A, 6.1A
Rds On (Max) @ Id, Vgs : 22 mOhm @ 5.7A, 4.5V
Vgs(th) (Max) @ Id : 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 850pF @ 10V
Power - Max : 1.6W, 1.7W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package : 8-TSSOP
Availability: 100 in stock
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