SI5513CDC-T1-GE3
SI5513CDC-T1-GE3
Manufacturer : Vishay Siliconix
Packaging : Cut Tape (CT)
Alternate Packaging
Series : TrenchFET®
Part Status : Active
FET Type : N and P-Channel
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 4A, 3.7A
Rds On (Max) @ Id, Vgs : 55 mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id : 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 4.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 285pF @ 10V
Power - Max : 3.1W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SMD, Flat Lead
Supplier Device Package : 1206-8 ChipFET™
Availability: 27324 in stock
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