SI3911DV-T1-E3
SI3911DV-T1-E3
Manufacturer : Vishay Siliconix
Packaging : Cut Tape (CT)
Series : TrenchFET®
Part Status : Obsolete
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 1.8A
Rds On (Max) @ Id, Vgs : 145 mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id : 450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs : 7.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : -
Power - Max : 830mW
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : SOT-23-6 Thin, TSOT-23-6
Supplier Device Package : 6-TSOP
Availability: 100 in stock
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