TPD3215M
TPD3215M
Manufacturer : Transphorm
Packaging : Bulk
Series : -
Part Status : Last Time Buy
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 70A (Tc)
Rds On (Max) @ Id, Vgs : 34 mOhm @ 30A, 8V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : 28nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds : 2260pF @ 100V
Power - Max : 470W
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : Module
Supplier Device Package : Module
Availability: 77 in stock
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