TRS12E65C,S1Q
TRS12E65C,S1Q
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tube
Series : -
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 650V
Current - Average Rectified (Io) : 12A (DC)
Voltage - Forward (Vf) (Max) @ If : 1.7V @ 12A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 90µA @ 170V
Capacitance @ Vr, F : 65pF @ 650V, 1MHz
Mounting Type : Through Hole
Package / Case : TO-220-2
Supplier Device Package : TO-220-2L
Operating Temperature - Junction : 175°C (Max)
Availability: 30 in stock
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