TPW1R306PL,L1Q
TPW1R306PL,L1Q
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSIX-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 260A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 1.29 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 91nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 8100pF @ 30V
FET Feature : -
Power Dissipation (Max) : 960mW (Ta), 170W (Tc)
Operating Temperature : 175°C
Mounting Type : Surface Mount
Supplier Device Package : 8-DSOP Advance
Package / Case : 8-PowerVDFN
Availability: 100 in stock
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