TPN4R712MD,L1Q
TPN4R712MD,L1Q
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVI
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
Rds On (Max) @ Id, Vgs : 4.7 mOhm @ 18A, 4.5V
Vgs(th) (Max) @ Id : 1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 65nC @ 5V
Vgs (Max) : ±12V
Input Capacitance (Ciss) (Max) @ Vds : 4300pF @ 10V
FET Feature : -
Power Dissipation (Max) : 42W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-TSON Advance (3.3x3.3)
Package / Case : 8-PowerVDFN
Availability: 15655 in stock
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