TPCC8009,LQ(O
TPCC8009,LQ(O
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : U-MOSIV
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 24A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 7 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id : 3V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 26nC @ 10V
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : 1270pF @ 10V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-TSON Advance (3.3x3.3)
Package / Case : 8-PowerVDFN
Availability: 100 in stock
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