TPC8213-H(TE12LQ,M
TPC8213-H(TE12LQ,M
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 5A
Rds On (Max) @ Id, Vgs : 50 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 625pF @ 10V
Power - Max : 450mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package : 8-SOP (5.5x6.0)
Availability: 100 in stock
New Original Stock
Competitive Prices
One-stop
Customer Service
