TPC8109(TE12L)
TPC8109(TE12L)
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Series : -
Part Status : Discontinued at
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 20 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 45nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2260pF @ 10V
FET Feature : -
Power Dissipation (Max) : 1W (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP (5.5x6.0)
Package / Case : 8-SOIC (0.173", 4.40mm Width)
Availability: 100 in stock
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