TPC6111(TE85L,F,M)
TPC6111(TE85L,F,M)
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSV
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 1.5V, 4.5V
Rds On (Max) @ Id, Vgs : 40 mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id : 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 10nC @ 5V
Vgs (Max) : ±8V
Input Capacitance (Ciss) (Max) @ Vds : 700pF @ 10V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : VS-6 (2.9x2.8)
Package / Case : SOT-23-6 Thin, TSOT-23-6
Availability: 1842 in stock