SSM6N815R,LF
SSM6N815R,LF
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : U-MOSVIII-H
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 2A (Ta)
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : 2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : 3.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 290pF @ 15V
Power - Max : 1.8W (Ta)
Operating Temperature : 150°C
Mounting Type : Surface Mount
Package / Case : 6-SMD, Flat Leads
Supplier Device Package : 6-TSOP-F
Availability: 2870 in stock
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