SSM6N61NU,LF
SSM6N61NU,LF
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 4A
Rds On (Max) @ Id, Vgs : 33 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id : 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 3.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 410pF @ 10V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-WDFN Exposed Pad
Supplier Device Package : 6-UDFNB (2x2)
Availability: 4658 in stock
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