SSM6N55NU,LF
SSM6N55NU,LF
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 4A
Rds On (Max) @ Id, Vgs : 46 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : 2.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 280pF @ 15V
Power - Max : 1W
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-WDFN Exposed Pad
Supplier Device Package : 6-µDFN(2x2)
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