SSM6N35AFE,LF
SSM6N35AFE,LF
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate, 1.2V Drive
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 250mA (Ta)
Rds On (Max) @ Id, Vgs : 1.1 Ohm @ 150mA, 4.5V
Vgs(th) (Max) @ Id : 1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : 0.34nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 36pF @ 10V
Power - Max : 250mW
Operating Temperature : 150°C
Mounting Type : Surface Mount
Package / Case : SOT-563, SOT-666
Supplier Device Package : ES6
Availability: 7854 in stock
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