SSM6L09FUTE85LF
SSM6L09FUTE85LF
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N and P-Channel
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 400mA, 200mA
Rds On (Max) @ Id, Vgs : 700 mOhm @ 200MA, 10V
Vgs(th) (Max) @ Id : 1.8V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : -
Input Capacitance (Ciss) (Max) @ Vds : 20pF @ 5V
Power - Max : 300mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6
Availability: 11516 in stock
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