RN2103MFV,L3F
RN2103MFV,L3F
Manufacturer : Toshiba Semiconductor and Storage
Packaging : -
Series : -
Part Status : Active
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 22 kOhms
Resistor - Emitter Base (R2) : 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : -
Power - Max : 150mW
Mounting Type : Surface Mount
Package / Case : SOT-723
Supplier Device Package : VESM
Availability: 100 in stock
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