RN1417(TE85L,F)
RN1417(TE85L,F)
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 10 kOhms
Resistor - Emitter Base (R2) : 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : 250MHz
Power - Max : 200mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : S-Mini
Availability: 100 in stock
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