HN4C06J-BL(TE85L,F
HN4C06J-BL(TE85L,F
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Not For New Designs
Transistor Type : 2 NPN (Dual) Common Emitter
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 120V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 2mA, 6V
Power - Max : 300mW
Frequency - Transition : 100MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-74A, SOT-753
Supplier Device Package : SMV
Availability: 3000 in stock
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