HN1B01FU-Y(L,F,T)
HN1B01FU-Y(L,F,T)
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN, PNP
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 2mA, 6V
Power - Max : 200mW
Frequency - Transition : 120MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6
Availability: 100 in stock
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