US6M2GTR
US6M2GTR
Manufacturer : Rohm Semiconductor
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N and P-Channel
FET Feature : Standard
Drain to Source Voltage (Vdss) : 30V, 20V
Current - Continuous Drain (Id) @ 25°C : 1.5A, 1A
Rds On (Max) @ Id, Vgs : 240 mOhm @ 1.5A, 4.5V, 390 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id : 1.5V @ 1mA, 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 2.2nC @ 4.5V, 2.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 80pF @ 10V, 150pF @ 10V
Power - Max : 1W
Operating Temperature : 150°C
Mounting Type : Surface Mount
Package / Case : 6-SMD, Flat Leads
Supplier Device Package : TUMT6
Availability: 2928 in stock
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