QS6J11TR
QS6J11TR
Manufacturer : Rohm Semiconductor
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 12V
Current - Continuous Drain (Id) @ 25°C : 2A
Rds On (Max) @ Id, Vgs : 105 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id : 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 6.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 770pF @ 6V
Power - Max : 600mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : SOT-23-6 Thin, TSOT-23-6
Supplier Device Package : TSMT6 (SC-95)
Availability: 100 in stock
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