HS8K11TB
HS8K11TB
Manufacturer : Rohm Semiconductor
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 7A, 11A
Rds On (Max) @ Id, Vgs : 17.9 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 11.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 500pF @ 15V
Power - Max : 2W
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-UDFN Exposed Pad
Supplier Device Package : HSML3030L10
Availability: 2460 in stock
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