BSM180D12P3C007
BSM180D12P3C007
Manufacturer : Rohm Semiconductor
Packaging : Bulk
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) : 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C : 180A (Tc)
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : 5.6V @ 50mA
Gate Charge (Qg) (Max) @ Vgs : -
Input Capacitance (Ciss) (Max) @ Vds : 900pF @ 10V
Power - Max : 880W
Operating Temperature : 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : Module
Supplier Device Package : Module
Availability: 20 in stock
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