BSM180D12P2C101
BSM180D12P2C101
Manufacturer : Rohm Semiconductor
Packaging : Bulk
Series : -
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) : 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C : 204A (Tc)
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : 4V @ 35.2mA
Gate Charge (Qg) (Max) @ Vgs : -
Input Capacitance (Ciss) (Max) @ Vds : 23000pF @ 10V
Power - Max : 1130W
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : -
Package / Case : Module
Supplier Device Package : Module
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