2SJ649-AZ
2SJ649-AZ
Manufacturer : Renesas Electronics America
Packaging : Bulk
Series : -
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 48 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : 38nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1900pF @ 10V
FET Feature : -
Power Dissipation (Max) : 2W (Ta), 25W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220 Isolated Tab
Package / Case : TO-220-3 Isolated Tab
Availability: 1781 in stock
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