QJD1210011
QJD1210011
Manufacturer : Powerex Inc.
Packaging : Bulk
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) : 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C : 100A (Tc)
Rds On (Max) @ Id, Vgs : 25 mOhm @ 100A, 20V
Vgs(th) (Max) @ Id : 5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs : 500nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds : 10200pF @ 800V
Power - Max : 900W
Operating Temperature : -40°C ~ 175°C (TJ)
Mounting Type : Chassis Mount
Package / Case : Module
Supplier Device Package : Module
Availability: 100 in stock
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