NGTB50N65S1WG
NGTB50N65S1WG
Manufacturer : ON Semiconductor
Packaging : Tube
Series : -
Part Status : Active
IGBT Type : Trench
Voltage - Collector Emitter Breakdown (Max) : 650V
Current - Collector (Ic) (Max) : 140A
Current - Collector Pulsed (Icm) : 140A
Vce(on) (Max) @ Vge, Ic : 2.45V @ 15V, 50A
Power - Max : 300W
Switching Energy : 1.25mJ (on), 530µJ (off)
Input Type : Standard
Gate Charge : 128nC
Td (on/off) @ 25°C : 75ns/128ns
Test Condition : 400V, 50A, 10 Ohm, 15V
Reverse Recovery Time (trr) : 70ns
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247
Availability: 180 in stock