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1HN04CH-TL-W

1HN04CH-TL-W
Manufacturer : ON Semiconductor
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 270mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 8 Ohm @ 140mA, 10V
Vgs(th) (Max) @ Id : 2.6V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : 0.9nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 15pF @ 20V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 3-CPH
Package / Case : TO-236-3, SC-59, SOT-23-3
Availability: 3295 in stock
RFQ/Quote