PDTD123ES,126
PDTD123ES,126
Manufacturer : NXP USA Inc.
Packaging : Tape & Box (TB)
Series : -
Part Status : Obsolete
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 500mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 2.2 kOhms
Resistor - Emitter Base (R2) : 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 40 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 500mW
Mounting Type : Through Hole
Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package : TO-92-3
Availability: 100 in stock
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