APTM10DHM09T3G
APTM10DHM09T3G
Manufacturer : Microsemi Corporation
Packaging : Bulk
Series : POWER MOS V®
Part Status : Obsolete
FET Type : 2 N-Channel (Dual) Asymmetrical
FET Feature : Standard
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 139A
Rds On (Max) @ Id, Vgs : 10 mOhm @ 69.5A, 10V
Vgs(th) (Max) @ Id : 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs : 350nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 9875pF @ 25V
Power - Max : 390W
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Package / Case : SP3
Supplier Device Package : SP3
Availability: 100 in stock
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