IXFH6N100F
IXFH6N100F
Manufacturer : IXYS-RF
Packaging : Tube
Series : HiPerRF™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 1000V
Current - Continuous Drain (Id) @ 25°C : 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.9 Ohm @ 3A, 10V
Vgs(th) (Max) @ Id : 5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs : 54nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1770pF @ 25V
FET Feature : -
Power Dissipation (Max) : 180W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247 (IXFH)
Package / Case : TO-247-3
Availability: 132 in stock
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