IPG20N06S4L26ATMA1
IPG20N06S4L26ATMA1
Manufacturer : Infineon Technologies
Packaging : Cut Tape (CT)
Alternate Packaging
Series : OptiMOS™
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 20A
Rds On (Max) @ Id, Vgs : 26 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id : 2.2V @ 10µA
Gate Charge (Qg) (Max) @ Vgs : 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 1430pF @ 25V
Power - Max : 33W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-PowerVDFN
Supplier Device Package : PG-TDSON-8-4
Availability: 2135 in stock
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