IPG20N06S2L35ATMA1
IPG20N06S2L35ATMA1
Manufacturer : Infineon Technologies
Packaging : Cut Tape (CT)
Alternate Packaging
Series : Automotive, AEC-Q101, OptiMOS™
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 55V
Current - Continuous Drain (Id) @ 25°C : 20A
Rds On (Max) @ Id, Vgs : 35 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id : 2V @ 27µA
Gate Charge (Qg) (Max) @ Vgs : 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 790pF @ 25V
Power - Max : 65W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-PowerVDFN
Supplier Device Package : PG-TDSON-8-4
Availability: 100 in stock
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