DF11MR12W1M1B11BOMA1
DF11MR12W1M1B11BOMA1
Manufacturer : Infineon Technologies
Packaging : Tray
Series : CoolSiC?br/>Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) : 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C : 50A
Rds On (Max) @ Id, Vgs : 23 mOhm @ 50A, 15V
Vgs(th) (Max) @ Id : 5.5V @ 20mA
Gate Charge (Qg) (Max) @ Vgs : 125nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 3950pF @ 800V
Power - Max : 20mW
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Package / Case : Module
Supplier Device Package : Module
Availability: 24 in stock
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