BSG0811NDATMA1
BSG0811NDATMA1
Manufacturer : Infineon Technologies
Packaging : Cut Tape (CT)
Alternate Packaging
Series : OptiMOS™
Part Status : Active
FET Type : 2 N-Channel (Dual) Asymmetrical
FET Feature : Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss) : 25V
Current - Continuous Drain (Id) @ 25°C : 19A, 41A
Rds On (Max) @ Id, Vgs : 3 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id : 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 8.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 1100pF @ 12V
Power - Max : 2.5W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-PowerTDFN
Supplier Device Package : PG-TISON-8
Availability: 100 in stock
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