GA50JT06-258
GA50JT06-258
Manufacturer : GeneSiC Semiconductor
Packaging : Bulk
Series : -
Part Status : Active
FET Type : -
Technology : SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 25 mOhm @ 50A
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : 769W (Tc)
Operating Temperature : -55°C ~ 225°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-258
Package / Case : TO-258-3, TO-258AA
Availability: 100 in stock
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