1N8035-GA
1N8035-GA
Manufacturer : GeneSiC Semiconductor
Packaging : Tube
Series : -
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 650V
Current - Average Rectified (Io) : 14.6A (DC)
Voltage - Forward (Vf) (Max) @ If : 1.5V @ 15A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 5µA @ 650V
Capacitance @ Vr, F : 1107pF @ 1V, 1MHz
Mounting Type : Surface Mount
Package / Case : TO-276AA
Supplier Device Package : TO-276
Operating Temperature - Junction : -55°C ~ 250°C
Availability: 100 in stock
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