Infineon releases new modular half bridge power board

Recently, Infineon officially announced the adoption of OptiMOS technology ™ Modular half bridge power board with 6-power MOSFET. This power board module adopts OptiMOS ™ 6 power MOSFET 135V, equipped with a D ² PAK 7-pin package, is the power part of the LVD expandable power demonstration board platform.
This modular half bridge power board is uniquely designed with a power switch and gate driver interface, providing users with a single half bridge solution. This design enables users to easily build any half bridge based power topology to meet various application requirements.
In addition, Infineon has also launched a variety of power boards, which use OptiMOS with D ² PAK, D ² PAK-7, and TO leadless packaging ™ Series products. These power boards not only showcase OptiMOS ™ The excellent performance of power MOSFETs has also demonstrated their parallel and heat dissipation capabilities.
The modular half bridge power board released by Infineon not only provides users with more flexible and efficient power solutions, but also further promotes the development of power semiconductor technology. By adopting advanced OptiMOS technology ™ With 6 power MOSFETs and optimized packaging design, Infineon has successfully combined high performance and reliability, bringing users a better user experience.
In the future, Infineon will continue to be committed to the research and innovation of power semiconductor technology, providing users with higher quality products and services.