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Part Number
Manufacturer
Description
Unit Price
In Stock
2N7002BKVL
Nexperia
Manufacturer : Nexperia USA Inc.
Packaging : Cut Tape (CT)
Alternate Packaging
Series : Automotive, AEC-Q101, TrenchMOS™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 1.6 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 0.6nC @ 4.5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 10V
FET Feature : -
Power Dissipation (Max) : 370mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-236AB
Package / Case : TO-236-3, SC-59, SOT-23-3
Packaging : Cut Tape (CT)
Alternate Packaging
Series : Automotive, AEC-Q101, TrenchMOS™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 1.6 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 0.6nC @ 4.5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 10V
FET Feature : -
Power Dissipation (Max) : 370mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-236AB
Package / Case : TO-236-3, SC-59, SOT-23-3
0
100 in stock
2N7002BKW,115
Nexperia
Manufacturer : Nexperia USA Inc.
Packaging : Cut Tape (CT)
Alternate Packaging
Series : Automotive, AEC-Q101, TrenchMOS™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 310mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.6 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 0.6nC @ 4.5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 10V
FET Feature : -
Power Dissipation (Max) : 275mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-323-3
Package / Case : SC-70, SOT-323
Packaging : Cut Tape (CT)
Alternate Packaging
Series : Automotive, AEC-Q101, TrenchMOS™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 310mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.6 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 0.6nC @ 4.5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 10V
FET Feature : -
Power Dissipation (Max) : 275mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-323-3
Package / Case : SC-70, SOT-323
0
100 in stock
2N7002CK,215
Nexperia
Manufacturer : Nexperia USA Inc.
Packaging : Cut Tape (CT)
Alternate Packaging
Series : Automotive, AEC-Q101, TrenchMOS™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.6 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 1.3nC @ 4.5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 55pF @ 25V
FET Feature : -
Power Dissipation (Max) : 350mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-236AB (SOT23)
Package / Case : TO-236-3, SC-59, SOT-23-3
Packaging : Cut Tape (CT)
Alternate Packaging
Series : Automotive, AEC-Q101, TrenchMOS™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.6 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 1.3nC @ 4.5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 55pF @ 25V
FET Feature : -
Power Dissipation (Max) : 350mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-236AB (SOT23)
Package / Case : TO-236-3, SC-59, SOT-23-3
0
35950 in stock
2N7002-D87Z
Aptina / ON Semiconductor
Manufacturer : ON Semiconductor
Packaging : Cut Tape (CT)
Series : -
Part Status : Discontinued at
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 7.5 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V
FET Feature : -
Power Dissipation (Max) : 200mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-23 (TO-236AB)
Package / Case : TO-236-3, SC-59, SOT-23-3
Packaging : Cut Tape (CT)
Series : -
Part Status : Discontinued at
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 7.5 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V
FET Feature : -
Power Dissipation (Max) : 200mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-23 (TO-236AB)
Package / Case : TO-236-3, SC-59, SOT-23-3
0
100 in stock
2N7002E
Panasonic
Manufacturer : Panasonic Electronic Components
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 3 Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 0.8nC @ 4.5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 40pF @ 10V
FET Feature : -
Power Dissipation (Max) : 350mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-23-3 (TO-236)
Package / Case : TO-236-3, SC-59, SOT-23-3
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 3 Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 0.8nC @ 4.5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 40pF @ 10V
FET Feature : -
Power Dissipation (Max) : 350mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-23-3 (TO-236)
Package / Case : TO-236-3, SC-59, SOT-23-3
0
100 in stock
2N7002E
Electro-Films (EFI) / Vishay
Manufacturer : Vishay Siliconix
Packaging : Bulk
Alternate Packaging
Series : -
Part Status : Discontinued at
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 240mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 3 Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 0.6nC @ 4.5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 21pF @ 5V
FET Feature : -
Power Dissipation (Max) : 350mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-23-3 (TO-236)
Package / Case : TO-236-3, SC-59, SOT-23-3
Packaging : Bulk
Alternate Packaging
Series : -
Part Status : Discontinued at
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 240mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 3 Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 0.6nC @ 4.5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 21pF @ 5V
FET Feature : -
Power Dissipation (Max) : 350mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-23-3 (TO-236)
Package / Case : TO-236-3, SC-59, SOT-23-3
0
27 in stock
2N7002E,215
Nexperia
Manufacturer : Nexperia USA Inc.
Packaging : Tape & Reel (TR)
Series : TrenchMOS™
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 385mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 3 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 0.69nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 10V
FET Feature : -
Power Dissipation (Max) : 830mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-236AB (SOT23)
Package / Case : TO-236-3, SC-59, SOT-23-3
Packaging : Tape & Reel (TR)
Series : TrenchMOS™
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 385mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 3 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 0.69nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 10V
FET Feature : -
Power Dissipation (Max) : 830mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-236AB (SOT23)
Package / Case : TO-236-3, SC-59, SOT-23-3
0
100 in stock
2N7002-E3
Electro-Films (EFI) / Vishay
Manufacturer : Vishay Siliconix
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 7.5 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V
FET Feature : -
Power Dissipation (Max) : 200mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-236
Package / Case : TO-236-3, SC-59, SOT-23-3
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 7.5 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V
FET Feature : -
Power Dissipation (Max) : 200mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-236
Package / Case : TO-236-3, SC-59, SOT-23-3
0
100 in stock
2N7002E-7-F
Diodes Incorporated
Manufacturer : Diodes Incorporated
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 3 Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 0.22nC @ 4.5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V
FET Feature : -
Power Dissipation (Max) : 370mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-23-3
Package / Case : TO-236-3, SC-59, SOT-23-3
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 3 Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 0.22nC @ 4.5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V
FET Feature : -
Power Dissipation (Max) : 370mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-23-3
Package / Case : TO-236-3, SC-59, SOT-23-3
0
4538 in stock
2N7002E-T1-E3
Electro-Films (EFI) / Vishay
Manufacturer : Vishay Siliconix
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 240mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 3 Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 0.6nC @ 4.5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 21pF @ 5V
FET Feature : -
Power Dissipation (Max) : 350mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-23-3 (TO-236)
Package / Case : TO-236-3, SC-59, SOT-23-3
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 240mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 3 Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 0.6nC @ 4.5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 21pF @ 5V
FET Feature : -
Power Dissipation (Max) : 350mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-23-3 (TO-236)
Package / Case : TO-236-3, SC-59, SOT-23-3
0
13727 in stock
2N7002ET1G
Aptina / ON Semiconductor
Manufacturer : ON Semiconductor
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 260mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 2.5 Ohm @ 240mA, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 0.81nC @ 5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 26.7pF @ 25V
FET Feature : -
Power Dissipation (Max) : 300mW (Tj)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-23-3 (TO-236)
Package / Case : TO-236-3, SC-59, SOT-23-3
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 260mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 2.5 Ohm @ 240mA, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 0.81nC @ 5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 26.7pF @ 25V
FET Feature : -
Power Dissipation (Max) : 300mW (Tj)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-23-3 (TO-236)
Package / Case : TO-236-3, SC-59, SOT-23-3
0
100 in stock
2N7002E-T1-GE3
Electro-Films (EFI) / Vishay
Manufacturer : Vishay Siliconix
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 240mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 3 Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 0.6nC @ 4.5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 21pF @ 5V
FET Feature : -
Power Dissipation (Max) : 350mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : -
Package / Case : TO-236-3, SC-59, SOT-23-3
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 240mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 3 Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 0.6nC @ 4.5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 21pF @ 5V
FET Feature : -
Power Dissipation (Max) : 350mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : -
Package / Case : TO-236-3, SC-59, SOT-23-3
0
5804 in stock
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