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Part Number
Manufacturer
Description
Unit Price
In Stock
ZXMN3B04N8TA
Diodes Incorporated
Manufacturer : Diodes Incorporated
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
Rds On (Max) @ Id, Vgs : 25 mOhm @ 7.2A, 4.5V
Vgs(th) (Max) @ Id : 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 23.1nC @ 4.5V
Vgs (Max) : ±12V
Input Capacitance (Ciss) (Max) @ Vds : 2480pF @ 15V
FET Feature : -
Power Dissipation (Max) : 2W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SO
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
Rds On (Max) @ Id, Vgs : 25 mOhm @ 7.2A, 4.5V
Vgs(th) (Max) @ Id : 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 23.1nC @ 4.5V
Vgs (Max) : ±12V
Input Capacitance (Ciss) (Max) @ Vds : 2480pF @ 15V
FET Feature : -
Power Dissipation (Max) : 2W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SO
Package / Case : 8-SOIC (0.154", 3.90mm Width)
0
2839 in stock
ZXMN3B04N8TC
Diodes Incorporated
Manufacturer : Diodes Incorporated
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
Rds On (Max) @ Id, Vgs : 25 mOhm @ 7.2A, 4.5V
Vgs(th) (Max) @ Id : 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 23.1nC @ 4.5V
Vgs (Max) : ±12V
Input Capacitance (Ciss) (Max) @ Vds : 2480pF @ 15V
FET Feature : -
Power Dissipation (Max) : 2W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SO
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
Rds On (Max) @ Id, Vgs : 25 mOhm @ 7.2A, 4.5V
Vgs(th) (Max) @ Id : 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 23.1nC @ 4.5V
Vgs (Max) : ±12V
Input Capacitance (Ciss) (Max) @ Vds : 2480pF @ 15V
FET Feature : -
Power Dissipation (Max) : 2W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SO
Package / Case : 8-SOIC (0.154", 3.90mm Width)
0
100 in stock
ZXMN3B14FTA
Diodes Incorporated
Manufacturer : Diodes Incorporated
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
Rds On (Max) @ Id, Vgs : 80 mOhm @ 3.1A, 4.5V
Vgs(th) (Max) @ Id : 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 6.7nC @ 4.5V
Vgs (Max) : ±12V
Input Capacitance (Ciss) (Max) @ Vds : 568pF @ 15V
FET Feature : -
Power Dissipation (Max) : 1W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-23-3
Package / Case : TO-236-3, SC-59, SOT-23-3
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
Rds On (Max) @ Id, Vgs : 80 mOhm @ 3.1A, 4.5V
Vgs(th) (Max) @ Id : 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 6.7nC @ 4.5V
Vgs (Max) : ±12V
Input Capacitance (Ciss) (Max) @ Vds : 568pF @ 15V
FET Feature : -
Power Dissipation (Max) : 1W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-23-3
Package / Case : TO-236-3, SC-59, SOT-23-3
0
11410 in stock
ZXMN3F30FHTA
Diodes Incorporated
Manufacturer : Diodes Incorporated
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 47 mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 7.7nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 318pF @ 15V
FET Feature : -
Power Dissipation (Max) : 950mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-23-3
Package / Case : TO-236-3, SC-59, SOT-23-3
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 47 mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 7.7nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 318pF @ 15V
FET Feature : -
Power Dissipation (Max) : 950mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-23-3
Package / Case : TO-236-3, SC-59, SOT-23-3
0
20382 in stock
ZXMN4A06GTA
Diodes Incorporated
Manufacturer : Diodes Incorporated
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 50 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 18.2nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 770pF @ 40V
FET Feature : -
Power Dissipation (Max) : 2W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-223
Package / Case : TO-261-4, TO-261AA
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 50 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 18.2nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 770pF @ 40V
FET Feature : -
Power Dissipation (Max) : 2W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-223
Package / Case : TO-261-4, TO-261AA
0
8008 in stock
ZXMN4A06KTC
Diodes Incorporated
Manufacturer : Diodes Incorporated
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 50 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 17.1nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 827pF @ 20V
FET Feature : -
Power Dissipation (Max) : 2.15W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-252-3
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 50 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 17.1nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 827pF @ 20V
FET Feature : -
Power Dissipation (Max) : 2.15W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-252-3
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
0
100 in stock
ZXMN6A07FTA
Diodes Incorporated
Manufacturer : Diodes Incorporated
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 250 mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 3.2nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 166pF @ 40V
FET Feature : -
Power Dissipation (Max) : 625mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-23-3
Package / Case : TO-236-3, SC-59, SOT-23-3
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 250 mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 3.2nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 166pF @ 40V
FET Feature : -
Power Dissipation (Max) : 625mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-23-3
Package / Case : TO-236-3, SC-59, SOT-23-3
0
100 in stock
ZXMN6A07FTC
Diodes Incorporated
Manufacturer : Diodes Incorporated
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 250 mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 3.2nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 166pF @ 40V
FET Feature : -
Power Dissipation (Max) : 625mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-23-3
Package / Case : TO-236-3, SC-59, SOT-23-3
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 250 mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 3.2nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 166pF @ 40V
FET Feature : -
Power Dissipation (Max) : 625mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-23-3
Package / Case : TO-236-3, SC-59, SOT-23-3
0
100 in stock
ZXMN6A07ZTA
Diodes Incorporated
Manufacturer : Diodes Incorporated
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 250 mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 3.2nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 166pF @ 40V
FET Feature : -
Power Dissipation (Max) : 1.5W (Ta)
Operating Temperature : -
Mounting Type : Surface Mount
Supplier Device Package : SOT-89-3
Package / Case : TO-243AA
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 250 mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 3.2nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 166pF @ 40V
FET Feature : -
Power Dissipation (Max) : 1.5W (Ta)
Operating Temperature : -
Mounting Type : Surface Mount
Supplier Device Package : SOT-89-3
Package / Case : TO-243AA
0
64013 in stock
ZXMN6A08E6QTA
Diodes Incorporated
Manufacturer : Diodes Incorporated
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 80 mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 5.8nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 459pF @ 40V
FET Feature : -
Power Dissipation (Max) : 1.1W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-26
Package / Case : SOT-23-6
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 80 mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 5.8nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 459pF @ 40V
FET Feature : -
Power Dissipation (Max) : 1.1W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-26
Package / Case : SOT-23-6
0
2862 in stock
ZXMN6A08E6TA
Diodes Incorporated
Manufacturer : Diodes Incorporated
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 80 mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 5.8nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 459pF @ 40V
FET Feature : -
Power Dissipation (Max) : 1.1W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-26
Package / Case : SOT-23-6
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 80 mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 5.8nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 459pF @ 40V
FET Feature : -
Power Dissipation (Max) : 1.1W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-26
Package / Case : SOT-23-6
0
100 in stock
ZXMN6A08E6TC
Diodes Incorporated
Manufacturer : Diodes Incorporated
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 80 mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 5.8nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 459pF @ 40V
FET Feature : -
Power Dissipation (Max) : 1.1W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-26
Package / Case : SOT-23-6
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 80 mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 5.8nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 459pF @ 40V
FET Feature : -
Power Dissipation (Max) : 1.1W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-26
Package / Case : SOT-23-6
0
100 in stock
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