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Part Number
Manufacturer
Description
Unit Price
In Stock
2N6661
Electro-Films (EFI) / Vishay
Manufacturer : Vishay Siliconix
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 90V
Current - Continuous Drain (Id) @ 25°C : 860mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 4 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V
FET Feature : -
Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-39
Package / Case : TO-205AD, TO-39-3 Metal Can
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 90V
Current - Continuous Drain (Id) @ 25°C : 860mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 4 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V
FET Feature : -
Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-39
Package / Case : TO-205AD, TO-39-3 Metal Can
0
100 in stock
2N6661
Microchip Technology
Manufacturer : Microchip Technology
Packaging : Bulk
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 90V
Current - Continuous Drain (Id) @ 25°C : 350mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 4 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 24V
FET Feature : -
Power Dissipation (Max) : 6.25W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-39
Package / Case : TO-205AD, TO-39-3 Metal Can
Packaging : Bulk
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 90V
Current - Continuous Drain (Id) @ 25°C : 350mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 4 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 24V
FET Feature : -
Power Dissipation (Max) : 6.25W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-39
Package / Case : TO-205AD, TO-39-3 Metal Can
0
298 in stock
2N6661-2
Electro-Films (EFI) / Vishay
Manufacturer : Vishay Siliconix
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 90V
Current - Continuous Drain (Id) @ 25°C : 860mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 4 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V
FET Feature : -
Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-39
Package / Case : TO-205AD, TO-39-3 Metal Can
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 90V
Current - Continuous Drain (Id) @ 25°C : 860mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 4 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V
FET Feature : -
Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-39
Package / Case : TO-205AD, TO-39-3 Metal Can
0
100 in stock
2N6661-E3
Electro-Films (EFI) / Vishay
Manufacturer : Vishay Siliconix
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 90V
Current - Continuous Drain (Id) @ 25°C : 860mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 4 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V
FET Feature : -
Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-39
Package / Case : TO-205AD, TO-39-3 Metal Can
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 90V
Current - Continuous Drain (Id) @ 25°C : 860mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 4 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V
FET Feature : -
Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-39
Package / Case : TO-205AD, TO-39-3 Metal Can
0
100 in stock
2N6661JAN02
Electro-Films (EFI) / Vishay
Manufacturer : Vishay Siliconix
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 90V
Current - Continuous Drain (Id) @ 25°C : 860mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 4 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V
FET Feature : -
Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-39
Package / Case : TO-205AD, TO-39-3 Metal Can
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 90V
Current - Continuous Drain (Id) @ 25°C : 860mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 4 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V
FET Feature : -
Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-39
Package / Case : TO-205AD, TO-39-3 Metal Can
0
100 in stock
2N6661JTVP02
Electro-Films (EFI) / Vishay
Manufacturer : Vishay Siliconix
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 90V
Current - Continuous Drain (Id) @ 25°C : 860mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 4 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V
FET Feature : -
Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-39
Package / Case : TO-205AD, TO-39-3 Metal Can
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 90V
Current - Continuous Drain (Id) @ 25°C : 860mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 4 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V
FET Feature : -
Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-39
Package / Case : TO-205AD, TO-39-3 Metal Can
0
100 in stock
2N6661JTX02
Electro-Films (EFI) / Vishay
Manufacturer : Vishay Siliconix
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 90V
Current - Continuous Drain (Id) @ 25°C : 860mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 4 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V
FET Feature : -
Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-39
Package / Case : TO-205AD, TO-39-3 Metal Can
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 90V
Current - Continuous Drain (Id) @ 25°C : 860mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 4 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V
FET Feature : -
Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-39
Package / Case : TO-205AD, TO-39-3 Metal Can
0
100 in stock
2N6661JTXL02
Electro-Films (EFI) / Vishay
Manufacturer : Vishay Siliconix
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 90V
Current - Continuous Drain (Id) @ 25°C : 860mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 4 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V
FET Feature : -
Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-39
Package / Case : TO-205AD, TO-39-3 Metal Can
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 90V
Current - Continuous Drain (Id) @ 25°C : 860mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 4 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V
FET Feature : -
Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-39
Package / Case : TO-205AD, TO-39-3 Metal Can
0
100 in stock
2N6661JTXP02
Electro-Films (EFI) / Vishay
Manufacturer : Vishay Siliconix
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 90V
Current - Continuous Drain (Id) @ 25°C : 860mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 4 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V
FET Feature : -
Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-39
Package / Case : TO-205AD, TO-39-3 Metal Can
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 90V
Current - Continuous Drain (Id) @ 25°C : 860mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 4 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V
FET Feature : -
Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-39
Package / Case : TO-205AD, TO-39-3 Metal Can
0
100 in stock
2N6661JTXV02
Electro-Films (EFI) / Vishay
Manufacturer : Vishay Siliconix
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 90V
Current - Continuous Drain (Id) @ 25°C : 860mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 4 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V
FET Feature : -
Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-39
Package / Case : TO-205AD, TO-39-3 Metal Can
Packaging : Tube
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 90V
Current - Continuous Drain (Id) @ 25°C : 860mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 4 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V
FET Feature : -
Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-39
Package / Case : TO-205AD, TO-39-3 Metal Can
0
100 in stock
2N6756
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 210 mOhm @ 14A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 35nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : 4W (Ta), 75W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-204AA
Package / Case : TO-204AA, TO-3
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 210 mOhm @ 14A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 35nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : 4W (Ta), 75W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-204AA
Package / Case : TO-204AA, TO-3
0
100 in stock
2N6758
Microsemi
Manufacturer : Microsemi Corporation
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 490 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 39nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : 4W (Ta), 75W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-204AA
Package / Case : TO-204AA, TO-3
Packaging : Bulk
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 490 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 39nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : 4W (Ta), 75W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-204AA
Package / Case : TO-204AA, TO-3
0
100 in stock
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