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Part Number
Manufacturer
Description
Unit Price
In Stock
2SC2712-GR,LF
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 2mA, 6V
Power - Max : 150mW
Frequency - Transition : 80MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : S-Mini
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 2mA, 6V
Power - Max : 150mW
Frequency - Transition : 80MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : S-Mini
0
10453 in stock
2SC2712-OTE85LF
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 2mA, 6V
Power - Max : 150mW
Frequency - Transition : 80MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : TO-236
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 2mA, 6V
Power - Max : 150mW
Frequency - Transition : 80MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : TO-236
0
100 in stock
2SC2712-Y,LF
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 2mA, 6V
Power - Max : 150mW
Frequency - Transition : 80MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : S-Mini
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 2mA, 6V
Power - Max : 150mW
Frequency - Transition : 80MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : S-Mini
0
72518 in stock
2SC2713-BL,LF
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 120V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 350 @ 2mA, 6V
Power - Max : 150mW
Frequency - Transition : 100MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : TO-236
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 120V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 350 @ 2mA, 6V
Power - Max : 150mW
Frequency - Transition : 100MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : TO-236
0
100 in stock
2SC2713-GR,LF
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 120V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 2mA, 6V
Power - Max : 150mW
Frequency - Transition : 100MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : TO-236
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 120V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 2mA, 6V
Power - Max : 150mW
Frequency - Transition : 100MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : TO-236
0
237 in stock
2SC2837
Sanken Electric Co., Ltd.
Manufacturer : Sanken
Packaging : Bulk
Series : -
Part Status : Active
Transistor Type : NPN
Current - Collector (Ic) (Max) : 10A
Voltage - Collector Emitter Breakdown (Max) : 150V
Vce Saturation (Max) @ Ib, Ic : 2V @ 500mA, 5A
Current - Collector Cutoff (Max) : 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 3V, 4V
Power - Max : 100W
Frequency - Transition : 70MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-3P-3, SC-65-3
Supplier Device Package : TO-3P
Packaging : Bulk
Series : -
Part Status : Active
Transistor Type : NPN
Current - Collector (Ic) (Max) : 10A
Voltage - Collector Emitter Breakdown (Max) : 150V
Vce Saturation (Max) @ Ib, Ic : 2V @ 500mA, 5A
Current - Collector Cutoff (Max) : 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 3V, 4V
Power - Max : 100W
Frequency - Transition : 70MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-3P-3, SC-65-3
Supplier Device Package : TO-3P
0
1028 in stock
2SC2921
Sanken Electric Co., Ltd.
Manufacturer : Sanken
Packaging : Bulk
Series : -
Part Status : Obsolete
Transistor Type : NPN
Current - Collector (Ic) (Max) : 15A
Voltage - Collector Emitter Breakdown (Max) : 160V
Vce Saturation (Max) @ Ib, Ic : 2V @ 500mA, 5A
Current - Collector Cutoff (Max) : 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 5A, 4V
Power - Max : 150W
Frequency - Transition : 60MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Package / Case : 3-ESIP
Supplier Device Package : MT-200
Packaging : Bulk
Series : -
Part Status : Obsolete
Transistor Type : NPN
Current - Collector (Ic) (Max) : 15A
Voltage - Collector Emitter Breakdown (Max) : 160V
Vce Saturation (Max) @ Ib, Ic : 2V @ 500mA, 5A
Current - Collector Cutoff (Max) : 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 5A, 4V
Power - Max : 150W
Frequency - Transition : 60MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Package / Case : 3-ESIP
Supplier Device Package : MT-200
0
288 in stock
2SC2922
Sanken Electric Co., Ltd.
Manufacturer : Sanken
Packaging : Bulk
Series : -
Part Status : Obsolete
Transistor Type : NPN
Current - Collector (Ic) (Max) : 17A
Voltage - Collector Emitter Breakdown (Max) : 180V
Vce Saturation (Max) @ Ib, Ic : 2V @ 800mA, 8A
Current - Collector Cutoff (Max) : 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 8V, 4V
Power - Max : 200W
Frequency - Transition : 50MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Package / Case : 3-ESIP
Supplier Device Package : MT-200
Packaging : Bulk
Series : -
Part Status : Obsolete
Transistor Type : NPN
Current - Collector (Ic) (Max) : 17A
Voltage - Collector Emitter Breakdown (Max) : 180V
Vce Saturation (Max) @ Ib, Ic : 2V @ 800mA, 8A
Current - Collector Cutoff (Max) : 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 8V, 4V
Power - Max : 200W
Frequency - Transition : 50MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Package / Case : 3-ESIP
Supplier Device Package : MT-200
0
237 in stock
.jpg "Show details for 2SC3138-Y(TE85L,F)")
2SC3138-Y(TE85L,F)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Obsolete
Transistor Type : NPN
Current - Collector (Ic) (Max) : 50mA
Voltage - Collector Emitter Breakdown (Max) : 200V
Vce Saturation (Max) @ Ib, Ic : 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 10mA, 3V
Power - Max : 150mW
Frequency - Transition : 100MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : TO-236
Packaging : Tape & Reel (TR)
Alternate Packaging
Series : -
Part Status : Obsolete
Transistor Type : NPN
Current - Collector (Ic) (Max) : 50mA
Voltage - Collector Emitter Breakdown (Max) : 200V
Vce Saturation (Max) @ Ib, Ic : 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 10mA, 3V
Power - Max : 150mW
Frequency - Transition : 100MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : TO-236
0
100 in stock
2SC3263
Sanken Electric Co., Ltd.
Manufacturer : Sanken
Packaging : Bulk
Series : -
Part Status : Active
Transistor Type : NPN
Current - Collector (Ic) (Max) : 15A
Voltage - Collector Emitter Breakdown (Max) : 230V
Vce Saturation (Max) @ Ib, Ic : 2V @ 500mA, 5A
Current - Collector Cutoff (Max) : 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 40 @ 5A, 4V
Power - Max : 130W
Frequency - Transition : 60MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-3P-3, SC-65-3
Supplier Device Package : TO-3P
Packaging : Bulk
Series : -
Part Status : Active
Transistor Type : NPN
Current - Collector (Ic) (Max) : 15A
Voltage - Collector Emitter Breakdown (Max) : 230V
Vce Saturation (Max) @ Ib, Ic : 2V @ 500mA, 5A
Current - Collector Cutoff (Max) : 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 40 @ 5A, 4V
Power - Max : 130W
Frequency - Transition : 60MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-3P-3, SC-65-3
Supplier Device Package : TO-3P
0
798 in stock
2SC3265-Y,LF
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN
Current - Collector (Ic) (Max) : 800mA
Voltage - Collector Emitter Breakdown (Max) : 25V
Vce Saturation (Max) @ Ib, Ic : 400mV @ 20mA, 500mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 160 @ 100mA, 1V
Power - Max : 200mW
Frequency - Transition : 120MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : TO-236
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : NPN
Current - Collector (Ic) (Max) : 800mA
Voltage - Collector Emitter Breakdown (Max) : 25V
Vce Saturation (Max) @ Ib, Ic : 400mV @ 20mA, 500mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 160 @ 100mA, 1V
Power - Max : 200mW
Frequency - Transition : 120MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : TO-236
0
1816 in stock
2SC33120RA
Panasonic
Manufacturer : Panasonic Electronic Components
Packaging : Tape & Box (TB)
Alternate Packaging
Series : -
Part Status : Obsolete
Transistor Type : NPN
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 55V
Vce Saturation (Max) @ Ib, Ic : 1V @ 10mA, 100mA
Current - Collector Cutoff (Max) : 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce : 180 @ 2mA, 5V
Power - Max : 300mW
Frequency - Transition : 200MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Package / Case : NS-B1
Supplier Device Package : NS-B1
Packaging : Tape & Box (TB)
Alternate Packaging
Series : -
Part Status : Obsolete
Transistor Type : NPN
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 55V
Vce Saturation (Max) @ Ib, Ic : 1V @ 10mA, 100mA
Current - Collector Cutoff (Max) : 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce : 180 @ 2mA, 5V
Power - Max : 300mW
Frequency - Transition : 200MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Package / Case : NS-B1
Supplier Device Package : NS-B1
0
5000 in stock
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