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- Transistors - Bipolar (BJT) - Single, Pre-Biased
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Part Number
Manufacturer
Description
Unit Price
In Stock
.jpg "Show details for RN2312(TE85L,F)")
RN2312(TE85L,F)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 22 kOhms
Resistor - Emitter Base (R2) : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : 200MHz
Power - Max : 100mW
Mounting Type : Surface Mount
Package / Case : SC-70, SOT-323
Supplier Device Package : USM
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 22 kOhms
Resistor - Emitter Base (R2) : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : 200MHz
Power - Max : 100mW
Mounting Type : Surface Mount
Package / Case : SC-70, SOT-323
Supplier Device Package : USM
0
3000 in stock
.jpg "Show details for RN2313(TE85L,F)")
RN2313(TE85L,F)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 47 kOhms
Resistor - Emitter Base (R2) : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : 200MHz
Power - Max : 100mW
Mounting Type : Surface Mount
Package / Case : SC-70, SOT-323
Supplier Device Package : USM
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 47 kOhms
Resistor - Emitter Base (R2) : -
DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : 200MHz
Power - Max : 100mW
Mounting Type : Surface Mount
Package / Case : SC-70, SOT-323
Supplier Device Package : USM
0
100 in stock
.jpg "Show details for RN2314(TE85L,F)")
RN2314(TE85L,F)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 1 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : 200MHz
Power - Max : 100mW
Mounting Type : Surface Mount
Package / Case : SC-70, SOT-323
Supplier Device Package : USM
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 1 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : 200MHz
Power - Max : 100mW
Mounting Type : Surface Mount
Package / Case : SC-70, SOT-323
Supplier Device Package : USM
0
2980 in stock
RN2315TE85LF
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 2.2 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : 200MHz
Power - Max : 100mW
Mounting Type : Surface Mount
Package / Case : SC-70, SOT-323
Supplier Device Package : USM
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 2.2 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : 200MHz
Power - Max : 100mW
Mounting Type : Surface Mount
Package / Case : SC-70, SOT-323
Supplier Device Package : USM
0
3000 in stock
.jpg "Show details for RN2316(TE85L,F)")
RN2316(TE85L,F)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 4.7 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : 200MHz
Power - Max : 100mW
Mounting Type : Surface Mount
Package / Case : SC-70, SOT-323
Supplier Device Package : USM
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 4.7 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : 200MHz
Power - Max : 100mW
Mounting Type : Surface Mount
Package / Case : SC-70, SOT-323
Supplier Device Package : USM
0
6000 in stock
.jpg "Show details for RN2317(TE85L,F)")
RN2317(TE85L,F)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 10 kOhms
Resistor - Emitter Base (R2) : 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : 200MHz
Power - Max : 100mW
Mounting Type : Surface Mount
Package / Case : SC-70, SOT-323
Supplier Device Package : USM
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 10 kOhms
Resistor - Emitter Base (R2) : 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : 200MHz
Power - Max : 100mW
Mounting Type : Surface Mount
Package / Case : SC-70, SOT-323
Supplier Device Package : USM
0
2965 in stock
.jpg "Show details for RN2318(TE85L,F)")
RN2318(TE85L,F)
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 47 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : 200MHz
Power - Max : 100mW
Mounting Type : Surface Mount
Package / Case : SC-70, SOT-323
Supplier Device Package : USM
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Active
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 47 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : 200MHz
Power - Max : 100mW
Mounting Type : Surface Mount
Package / Case : SC-70, SOT-323
Supplier Device Package : USM
0
975 in stock
RN2402S,LF
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Series : -
Part Status : Discontinued at
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 10 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : 200MHz
Power - Max : 200mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : S-Mini
Packaging : Cut Tape (CT)
Series : -
Part Status : Discontinued at
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 10 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : 200MHz
Power - Max : 200mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : S-Mini
0
100 in stock
RN2402S,LF(D
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 10 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : 200MHz
Power - Max : 200mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : S-Mini
Packaging : Tape & Reel (TR)
Series : -
Part Status : Obsolete
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 10 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : 200MHz
Power - Max : 200mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : S-Mini
0
100 in stock
RN2404,LF
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Not For New Designs
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 47 kOhms
Resistor - Emitter Base (R2) : 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : 200MHz
Power - Max : 200mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : S-Mini
Packaging : Tape & Reel (TR)
Series : -
Part Status : Not For New Designs
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 47 kOhms
Resistor - Emitter Base (R2) : 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : 200MHz
Power - Max : 200mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : S-Mini
0
3000 in stock
RN2404TE85LF
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Tape & Reel (TR)
Series : -
Part Status : Active
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 47 kOhms
Resistor - Emitter Base (R2) : 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : 200MHz
Power - Max : 200mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : S-Mini
Packaging : Tape & Reel (TR)
Series : -
Part Status : Active
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 47 kOhms
Resistor - Emitter Base (R2) : 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : 200MHz
Power - Max : 200mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : S-Mini
0
100 in stock
RN2409,LF
Toshiba Semiconductor and Storage
Manufacturer : Toshiba Semiconductor and Storage
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 47 kOhms
Resistor - Emitter Base (R2) : 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : 200MHz
Power - Max : 200mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : S-Mini
Packaging : Cut Tape (CT)
Alternate Packaging
Series : -
Part Status : Discontinued at
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 47 kOhms
Resistor - Emitter Base (R2) : 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : 200MHz
Power - Max : 200mW
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : S-Mini
0
100 in stock
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